sangdest microelectronics technical data green products data sheet n0023, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 15SQ040L 15SQ040L schottky barrier rectifier applications z dc-dc converters z ac adapter z high frequency rectification circuit z bypass diodes features: z super-high speed & low noise switching z low voltage drop z this is a pb ? free device z all smc parts are traceable to the wafer lot z additional testing can be offered upon request mechanical dimensions: in inch es/ mm r-6
sangdest microelectronics technical data green products data sheet n0023, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 15SQ040L marking diagram: where xxxxx is yywwl 15SQ040L = part name ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping 15SQ040L r-6 (pb-free) 500pcs / reel for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel p ackaging specification.
sangdest microelectronics technical data green products data sheet n0023, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 15SQ040L maximum ratings type transient peak reverse voltage v rsm [v] @ half sine-wave forward voltage vf[v] @ if=15a 15SQ040L 40 0.48 characteristics symbol value unit max. average forward current,r-load @ta=50 i fav 15 a peak repetitive forward current 8.3ms single half sine-wave i fsm 150 a junction temperature at reduced reverse voltage vr 80%v rsm vr 50% v rsm in dc forward mode tj -50...+125 150 200 c storage temperature ts -50?+175 c maximum dc reverse current @ta=25 at rated dc blocking voltage @ta=100 ir <500 <100 ua ma thermal resistance junction to case r thc 5 c/w thermal resistance junction to leads r thl 2.5 c/w
sangdest microelectronics technical data green products data sheet n0023, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 15SQ040L 1 10 100 0.2 0.3 0.4 0.5 0.6 forward voltage drop-vf(v) instantanous forward current- if(a) 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10 15 20 25 30 35 40 45 reverse voltage-vr(v) reverse current-ir(ma) fig.2-typical values of reverse current vs.reverse voltage 100 1000 5 10152025303540 reverse voltage-vr(v) junction capacitance-ct(pf ) fig.1-typical junction capacitance vs.reverse voltage fi g .3-t yp ical instantaneous forward volta g e characteristics tj=25 tj=25 tj=25 tj=125
sangdest microelectronics technical data green products data sheet n0023, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 15SQ040L disclaimer: 1- the information given herein, including the specifications and dimensions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchasers are advised to c ontact the smc - sangdest microelectronics (nanjing) co., ltd sale s department for the latest version of the datasheet(s). 2- in cases where extremely high reliability is required (suc h as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensur ed by using semiconductor devices that feature assured safety or by means of users? fail-safe precautions or other arrangement . 3- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any damages that may result from an accid ent or any other cause during operation of the user?s units according to the datasheet(s). smc - sangdest microelectronics (nanjing) c o., ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of infor mation, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or smc - sangdest microelectr onics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permissio n of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations..
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